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|a STIMULATED EMISSION FROM INAS (GaAs) MONOLAYERS STACKS EMBEDDED IN Al0.33Ga0.67As ACTIVE REGION
|c A. Vincze, B. Rheinländer, D. Pudiš, G. Benndorf, J. Jakabovič, J. Kováč Jr., J. Kováč, R. Schwabe, V. Gottschalch
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|a Rheinländer, B.
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|a Pudiš, D.
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|a Benndorf, G.
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|a Jakabovič, J.
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|a Kováč, Jaroslav,
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|a Gottschalch, V.
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|t Advances in electrical and electronic engineering
|g Roč. 1, č. 1-2 (2002), s. 33-37
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