On the Einstein relation in n-channel inversion layers on ternary semiconductors

Bibliographic Details
Main Authors: Ghatak, K. P. (Author), Ghoshal, A. (Author)
Format: Article
Language:English
PhysicalDescription:Obr. 2. Res. rus., angl., lit. 24 zázn. v angl.
Subjects:
Description
Physical Description:Obr. 2. Res. rus., angl., lit. 24 zázn. v angl.