Bezák, V., & Boháček, P. Topological discussion of the critical points in selected electronic bands of crystalline silicon, germanium and gallium arsenide.
Chicago Style (17th ed.) CitationBezák, Viktor, and Pavel Boháček. Topological Discussion of the Critical Points in Selected Electronic Bands of Crystalline Silicon, Germanium and Gallium Arsenide.
MLA (9th ed.) CitationBezák, Viktor, and Pavel Boháček. Topological Discussion of the Critical Points in Selected Electronic Bands of Crystalline Silicon, Germanium and Gallium Arsenide.
Warning: These citations may not always be 100% accurate.
