APA (7th ed.) Citation

Malacký, Ľ. In0,53Ga0,47As Metal-Semiconductor-Metal Photodetector with p+/n-InP Barrier Enhancement Layer.

Chicago Style (17th ed.) Citation

Malacký, Ľ. In0,53Ga0,47As Metal-Semiconductor-Metal Photodetector with P+/n-InP Barrier Enhancement Layer.

MLA (9th ed.) Citation

Malacký, Ľ. In0,53Ga0,47As Metal-Semiconductor-Metal Photodetector with P+/n-InP Barrier Enhancement Layer.

Warning: These citations may not always be 100% accurate.