Trends in developing new semiconductor power devices based on SiC and diamond materials
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| Format: | Article |
| Language: | Slovak English |
| PhysicalDescription: | Grafy, sch., tab. |
| ISSN: | 1335-3632 |
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| Physical Description: | Grafy, sch., tab. |
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| ISSN: | 1335-3632 |
| Bibliography: | Res. angl. Biogr. údaje Bibliogr. odkazy |


