Horňanský, Ľ. THE INFLUENCE OF THE COMPENSATION ON THE DENSITY OF IMPURITY STATES AND THE ELECTRIC CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS OF DOPED Ge AT HIGH CONCENTRATIONS OF THE DONORS.
Chicago Style (17th ed.) CitationHorňanský, Ľudovít. THE INFLUENCE OF THE COMPENSATION ON THE DENSITY OF IMPURITY STATES AND THE ELECTRIC CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS OF DOPED Ge AT HIGH CONCENTRATIONS OF THE DONORS.
MLA (9th ed.) CitationHorňanský, Ľudovít. THE INFLUENCE OF THE COMPENSATION ON THE DENSITY OF IMPURITY STATES AND THE ELECTRIC CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS OF DOPED Ge AT HIGH CONCENTRATIONS OF THE DONORS.
Warning: These citations may not always be 100% accurate.
