Skip to content
Book Bag:
0
items
(Full)
Login
Language
English
Slovak
Catalog
Catalog Books
Articles
Catalog ONDV
Catalog OND
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Find
Advanced
CHARACTERIZATION OF DOPING PRO...
Cite this
Print
Export Record
Export to MARC
Export to BibTeX
Export to Jednoduchý textový výpis
Export to ISBD (text)
Export to Citácia ISO 690 (HTML)
Export to Citácia ISO 690 (.doc)
Add to Book Bag
Remove from Book Bag
Permanent link
CHARACTERIZATION OF DOPING PROFILES IN MBE GROWN SILICON BY ELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS
Bibliographic Details
Main Authors:
Kinder, R.
(Author)
,
Breza, Juraj, 1951-
(Author)
,
Hulényi, L.
(Author)
Format:
Article
Language:
English
Pozri predplatné
Predplatné
Kliknite na „Pozri predplatné“.
Holdings
Description
Similar Items
Staff View
Similar Items
Determination of doping profiles by an automated electrochemical capacitance-voltage technique
by: Kinder, Rudolf, 1940-, et al.
DETERMINATION OF THE DEPTH OF THE P-N JUNCTION BY THE ELECTROCHEMICAL CAPACITANCE-VOLTAGE TECHNIQUE
by: Hulényi, L., et al.
IDENTIFICATION OF DOMINANT DEFECTS IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON USING CAPACITANCE MEASUREMENT TECHNIQUES
by: Bobula, J., et al.
Anodic dissolution of silicon by electrochemical carrier concentration profiling
by: Kinder, Rudolf, 1940-, et al.
Determination of Doping Profiles by Automated C-V Measurements
by: Kinder, Rudolf