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III-AS HIGH ELECTRON MOBILITY...
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III-AS HIGH ELECTRON MOBILITY TRANSISTORS WITH RECESSED EX-SITU GATE OXIDE
Bibliographic Details
Main Authors:
Gregušová, Dagmar, 1958-
(Author)
,
Gucmann, F.
(Author)
,
Liday, J.
(Author)
,
Novák, J.
(Author)
,
Fröhlich, K.
(Author)
,
Kordoš, Peter, 1939-
(Author)
,
Vogrinčič, P.
(Author)
,
Kúdela, R.
(Author)
,
Stoklas, R.
(Author)
,
Gaži, Š.
(Author)
Format:
Article
Language:
English
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