Skip to content
Book Bag:
0
items
(Full)
Login
Language
English
Slovak
Catalog
Catalog Books
Articles
Catalog ONDV
Catalog OND
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Find
Advanced
TEMPERATURE ANALYSIS OF THE RU...
Cite this
Print
Export Record
Export to MARC
Export to BibTeX
Export to Jednoduchý textový výpis
Export to ISBD (text)
Export to Citácia ISO 690 (HTML)
Export to Citácia ISO 690 (.doc)
Add to Book Bag
Remove from Book Bag
Permanent link
TEMPERATURE ANALYSIS OF THE RUGGEDNESS OF POWER MOS TRANSISTOR DURING UIS TEST SUPPORTED BY MODELING AND SIMULATION
Bibliographic Details
Main Authors:
Vrbický, Andrej
(Author)
,
Donoval, Daniel, 1953-
(Author)
,
Marek, Juraj
(Author)
Format:
Article
Language:
English
Pozri predplatné
Predplatné
Kliknite na „Pozri predplatné“.
Holdings
Description
Similar Items
Staff View
Similar Items
DETERMINING OF THE FAILURE MECHANISM DURING UIS TEST COMBINING SINGLE AND MULTIPULSE UIS TEST
by: Chvála, Aleš, et al.
LOW VOLTAGE POWER TRANSISTOR MODEL FOR SPICE-LIKE ELECTROTHERMAL CIRCUIT SIMULATION
by: Chvála, Aleš, et al.
A PSEUDO-MOS/SOI TRANSISTOR WITH TWO INVERSION CHANNELS
by: Ravariu, C., et al.
EXPERIMENTAL ANALYSIS OF COMMUTATION PROCESS OF POWER SEMICONDUCTOR TRANSISTOR'S STRUCTURES
by: Dobručký, Branislav, et al.
ANALYSIS AND OPTIMIZATION OF SILICON DETECTOR SUPPORTED BY ELECTRO-PHYSICAL MODELING AND SIMULATION
by: Chvála, Ales, et al.
