APA (7th ed.) Citation

Bobula, J., Harmatha, L., Stuchlíková, Ľ., & Ťapajna, M. IDENTIFICATION OF DOMINANT DEFECTS IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON USING CAPACITANCE MEASUREMENT TECHNIQUES.

Chicago Style (17th ed.) Citation

Bobula, J., Ladislav Harmatha, Ľubica Stuchlíková, and Milan Ťapajna. IDENTIFICATION OF DOMINANT DEFECTS IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON USING CAPACITANCE MEASUREMENT TECHNIQUES.

MLA (9th ed.) Citation

Bobula, J., et al. IDENTIFICATION OF DOMINANT DEFECTS IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON USING CAPACITANCE MEASUREMENT TECHNIQUES.