OHMIC CONTACTS TO p-GaN BASED ON THE SINGLE-WALLED CARBON NANOTUBES

Similar Items

• IMPROVING THE OHMIC PROPERTIES OF Au/Ni-Mg/p-GaN CONTACTS BY ADDING SWCNT METALLIZATION INTERLAYER BETWEEN METAL AND p-GaN LAYERS
  by: Hotový, Ivan, 1957-, et al.
• OHMIC CONTACTS TO p-GaN USING Au/Ni-Zn-O METALLIZATION
  by: Bonanni, Alberta, et al.
• LOW TEMPERATURE OHMIC CONTACTS FOR SELF-ALIGNED GAN-BASED HEMTS
  by: Gregušová, Dagmar, 1958-, et al.
• OHMIC CONTACTS TO p-GaN USING Au/Ni-Mg-O METALLIZATION
  by: Bonanni, Alberta, et al.
• Ion implanted ohmic contacts to AlGaN/GaN structures
  by: Boratyński, Bogusław, et al.