|
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|
| LEADER |
00000nab a2200000 a 4500 |
| 001 |
vtls000510663 |
| 003 |
SK-MaSNL |
| 005 |
20260304083751.0 |
| 008 |
250425c1993 xo 0 slo |
| 015 |
|
|
|a SNBRB19rr/mm-uuuuu
|
| 035 |
|
|
|a CL0510801
|
| 035 |
|
|
|a urn:nbn:sk:snk-abd2ha
|
| 035 |
|
|
|a (urnnbn)urn:nbn:sk:snk:ar-006wmu
|
| 035 |
|
|
|a (uuid)8f3ee17c-8d8f-41ee-95e9-9ad89dd49cd5
|
| 040 |
|
|
|a SNKBUCL
|b slo
|c SNKBUCL
|e AACR2
|
| 041 |
0 |
|
|a eng
|
| 044 |
|
|
|a xo
|c SK
|
| 080 |
|
|
|a 621.382.3.032.9
|2 1981
|
| 245 |
0 |
4 |
|a The influence of radiation stimulated gettering on the reliability of silicon device structures
|c Yu.S. Kleinfeld, R.U. Konakova, V.F. Sinkevič, A.A. Pavlenko
|
| 300 |
|
|
|b Grafy 2, lit. 4 zázn. v angl., ruš.
|
| 650 |
0 |
7 |
|a zariadenia polovodičové
|2 snkbucl
|9 1375064
|
| 650 |
0 |
7 |
|a tranzistory Si
|2 snkbucl
|9 1375065
|
| 650 |
0 |
7 |
|a getrovanie
|2 snkbucl
|9 1375066
|
| 650 |
0 |
7 |
|a beta žiarenie
|2 snkbucl
|9 106195
|
| 655 |
|
7 |
|a články z novín a časopisov
|2 snkbucl
|9 267496
|
| 700 |
1 |
|
|a Konakova, R. V.
|4 aut
|9 1155234
|
| 700 |
1 |
|
|a Sinkevič, V. F.
|4 aut
|9 1366593
|
| 700 |
1 |
|
|a Pavlenko, A. A.
|4 aut
|9 1375067
|
| 773 |
0 |
|
|t Elektrotechnický časopis
|g Roč. 44, č. 6 (1993), s. 177-178
|x 0013-578X
|
| 850 |
|
|
|a Slovenská národná knižnica
|
| 852 |
|
|
|a Slovenská národná knižnica
|
| 958 |
|
|
|a article17
|
| 958 |
|
|
|a RK
|
| 958 |
|
|
|a UA
|
| 958 |
|
|
|a OND
|
| 958 |
|
|
|a EUIPO
|
| 992 |
|
|
|a RBX
|
| 999 |
|
|
|c 2801255
|d 2803185
|
