|
|
|
|
| LEADER |
00000nab a2200000 a 4500 |
| 001 |
vtls000640745 |
| 003 |
SK-MaSNL |
| 005 |
20260304083827.0 |
| 008 |
250425c1997 xo 0 slo |
| 015 |
|
|
|a SNBRB19rr/mm-uuuuu
|
| 035 |
|
|
|a CL0640884
|
| 035 |
|
|
|a urn:nbn:sk:snk-abh51
|
| 035 |
|
|
|a (urnnbn)urn:nbn:sk:snk:ar-a03s27
|
| 035 |
|
|
|a (uuid)c06537b3-9457-4b1b-b32c-4d3d6f19df56
|
| 040 |
|
|
|a SNKBUCL
|b slo
|c SNKBUCL
|e AACR2
|
| 041 |
0 |
|
|a eng
|
| 044 |
|
|
|a xo
|c SK
|
| 080 |
|
|
|a 621.3.049.77:621.317.33
|2 1981
|
| 080 |
|
|
|a 621.317.33
|2 1981
|
| 080 |
|
|
|a 621.382.049.77
|2 1981
|
| 100 |
1 |
|
|a Kinder, Rudolf
|4 aut
|9 626961
|
| 245 |
1 |
0 |
|a Determination of Carrier Concentration Profile of MOS (pn) Structures by the Capacitance Technique
|c Rudolf Kinder, Ladislav Hulényi
|
| 300 |
|
|
|b Obr. 4, lit. 7 zázn. v angl.
|
| 500 |
|
|
|a Životopisné údaje
|
| 650 |
0 |
7 |
|a štruktúry MOS
|2 snkbucl
|9 1375235
|
| 650 |
0 |
7 |
|a priechody p-n
|2 snkbucl
|9 1143014
|
| 650 |
0 |
7 |
|a reaktancia kapacitná
|2 snkbucl
|9 991918
|
| 655 |
|
7 |
|a články z novín a časopisov
|2 snkbucl
|9 267496
|
| 700 |
1 |
|
|a Hulényi, Ladislav,
|d 1938-
|4 aut
|9 16540
|
| 773 |
0 |
|
|t Journal of electrical engineering
|g Roč. 48, č. 7-8 (1997), s. 205-208
|x 0013-578X
|
| 850 |
|
|
|a Slovenská národná knižnica
|
| 852 |
|
|
|a Slovenská národná knižnica
|
| 958 |
|
|
|a article27
|
| 958 |
|
|
|a NB
|
| 958 |
|
|
|a RK
|
| 958 |
|
|
|a OND
|
| 958 |
|
|
|a EUIPO
|
| 999 |
|
|
|c 2801418
|d 2803348
|
