Correction of Electron Drift Mobility Depth Profiles for Parasitic Resistances in Ion-Implanted GaAs MESFET Structures

Bibliographic Details
Main Authors:	Boháček, Pavel (Author), Ďuriček, Ľ. (Author), Tonkó, P. (Author)
Format:	Article
Language:	Slovak English
Subjects:	štruktúry MESFET elektróny články z novín a časopisov

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