Correction of Electron Drift Mobility Depth Profiles for Parasitic Resistances in Ion-Implanted GaAs MESFET Structures
| Main Authors: | , , |
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| Format: | Article |
| Language: | Slovak English |
| Subjects: |
| Physical Description: | Grafy 4, sch. 1, tab. 1, res. angl., lit. 7 zázn. v angl., češ. |
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| ISSN: | 0013-578X |
