Skip to content
Book Bag:
0
items
(Full)
Login
Language
English
Slovak
Catalog
Catalog Books
Articles
Catalog ONDV
Catalog OND
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Find
Advanced
On Minority-Carrier Parameters...
Cite this
Print
Export Record
Export to MARC
Export to BibTeX
Export to Jednoduchý textový výpis
Export to ISBD (text)
Export to Citácia ISO 690 (HTML)
Export to Citácia ISO 690 (.doc)
Add to Book Bag
Remove from Book Bag
Permanent link
On Minority-Carrier Parameters in a Heavily Doped Silicon
Bibliographic Details
Main Authors:
De, S. S.
(Author)
,
Gosh, A. K.
(Author)
,
Hajra, A. K.
(Author)
,
Haldar, J. C.
(Author)
,
Bera, M.
(Author)
Format:
Article
Language:
Slovak
English
Subjects:
polovodiče Si
články z novín a časopisov
Pozri predplatné
Predplatné
Kliknite na „Pozri predplatné“.
Holdings
Description
Similar Items
Staff View
Similar Items
I-V Characteristics and their Temperature Dependence in As and GaAs Collector Regions of Heavily Doped HBTs
by: De, S. S., et al.
Anodic dissolution of silicon by electrochemical carrier concentration profiling
by: Kinder, Rudolf, 1940-, et al.
The Use of a Four Point Probe for Profiling of Submicron Layers
by: Kinder, R., et al.
Influence of carrier degeneracy on the elastic constants of gap less semiconductors
by: Ghatak, K. P., et al.
Variation of photoluminiscence lifetime in heavily doped AlxGa1-xAs/GaAs double heterostructure
by: De, S. S., et al.