I-V Characteristics and their Temperature Dependence in As and GaAs Collector Regions of Heavily Doped HBTs

Bibliographic Details
Main Authors:	De, S. S. (Author), Ghosh, A. K. (Author), Haldar, J. C. (Author), Sil, D. (Author), Bera, M. (Author), Hajra, A. K. (Author)
Format:	Article
Language:	Slovak English
Subjects:	bipolárne tranzistory články z novín a časopisov

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