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I-V Characteristics and their Temperature Dependence in As and GaAs Collector Regions of Heavily Doped HBTs

Bibliographic Details
Main Authors: De, S. S. (Author), Ghosh, A. K. (Author), Haldar, J. C. (Author), Sil, D. (Author), Bera, M. (Author), Hajra, A. K. (Author)
Format: Article
Language:Slovak
English
PhysicalDescription:Obr. 2, lit. 17 zázn. v angl.
ISSN:0013-578X
Subjects:
bipolárne tranzistory
články z novín a časopisov
Description
Physical Description:Obr. 2, lit. 17 zázn. v angl.
ISSN:0013-578X

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